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1 cghv40100 100 w, dc - 4.0 ghz, 50 v, gan hemt crees cghv40100 is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt). the cghv40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of rf and microwave applications. gan hemts offer high effciency, high gain and wide bandwidth capabilities making the cghv40100 ideal for linear and compressed amplifer circuits. the transistor is available in a 2-lead fange and pill package. re v 3.0 - ma y 2015 package types: 440193 & 440206 pn: cghv40100f & cghv40100p features ? up to 4 ghz operation ? 100 w typical output power ? 17.5 db small signal gain at 2.0 ghz ? application circuit for 0.5 - 2.5 ghz ? 55 % effciency at p sat ? 50 v operation typical performance over 500 mhz - 2.5 ghz (t c = 25?c), 50 v parameter 500 mhz 1.0 ghz 1.5 ghz 2.0 ghz 2.5 ghz units small signal gain 17.6 16.9 17.7 17.5 14.8 db saturated output power 147 100 141 116 112 w drain effciency @ p sat 68 56 58 54 54 % input return loss 6 5.1 10.5 5.5 8.8 db note: measured cw in the cghv40100f-amp application circuit. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 20.8 ma 25?c maximum drain current 1 i dmax 8.7 a 25?c soldering temperature 2 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case 3 r jc 1.62 ?c/w 85?c thermal resistance, junction to case 4 r jc 1.72 ?c/w 85?c case operating temperature 5 t c -40, +150 ?c 30 seconds note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 measured for the cghv40100p at p diss = 83 w. 4 measured for the cghv40100f at p diss = 83 w. 5 see also, power derating curve on page 7 electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 20.8 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 50 v, i d = 0.6 a saturated drain current 2 i ds 15.6 18.7 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 150 C C v dc v gs = -8 v, i d = 20.8 ma rf characteristics 3 (t c = 25 ? c, f 0 = 2.0 ghz unless otherwise noted) small signal gain g ss C 17.5 C db v dd = 50 v, i dq = 0.6 a power gain g p C 11.0 C db v dd = 50 v, i dq = 0.6 a, p out = p sat power output at saturation 4 p sat C 116 C w v dd = 50 v, i dq = 0.6 a drain effciency C 54 C % v dd = 50 v, i dq = 0.6 a, p out = p sat output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 0.6 a, p out = 100 w cw dynamic characteristics 5 input capacitance c gs C 29.3 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 7.3 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.61 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 measured in cghv40100-amp 4 p sat is defned as i g 5 includes package cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 cghv40100 typical performance figure 1. - small signal gain and return losses versus frequency measured in application circuit cghv40100-amp v dd = 50 v, i dq = 600 ma, tcase = 25c figure 2. - output power and drain effciency vs frequency v dd = 50 v, i dq = 600 ma 22 24 26 28 30 32 34 36 38 54 56 58 60 62 64 66 68 70 gai n ( d b ) po u t ( d b m) , d r ai n ef f i ci en cy ( % ) cghv40100f in applications circuit vdd = 50 v, idq = 600 ma, tcase = 25 c cw @ psat output power drain efficiency gain 8 10 12 14 16 18 20 22 40 42 44 46 48 50 52 54 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 po u t ( d b m) , d r ai n ef f i ci en cy ( % ) frequency (ghz) drain effciency 4 8 12 16 20 24 g a i n , r e tu r n l o s s (d b ) small signal s-parameters cghv40100f in applications circuit vdd = 50 v, idq = 600 ma, tcase = 25 c s11 s21 s22 -16 -12 -8 -4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 g a i n , r e tu r n l o s s (d b ) frequency (ghz) cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 cghv40100 typical performance figure 3. - third order intermodulation distortion vs average output power measured in broadband amplifer circuit cghv40100-amp spacing = 1 mhz, v dd = 50 v, i dq = 600 ma, tcase = 25c figure 4. - third order intermodulation distortion vs frequency measured in broadband amplifer circuit cghv40100-amp spacing = 1 mhz, v dd = 50 v, i dq = 600 ma, tcase = 25c - 30 -25 -20 -15 -10 -5 0 i m d 3 ( d b c) cghv40100f in applications circuit vdd = 50 v, idq = 600 ma, tcase = 25 c 1 mhz two tone spacing 0.5 ghz 1.5 ghz 2.5 ghz -60 -55 -50 -45 -40 -35 - 30 27 29 31 33 35 37 39 41 43 45 47 average output power (dbm) - 30 -25 -20 -15 -10 -5 0 i m d 3 ( d b c) cghv40100f in applications circuit vdd = 50 v, idq = 600 ma, tcase = 25 c 1 mhz two tone spacing @ 10w average pout -60 -55 -50 -45 -40 -35 - 30 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 frequency (ghz) cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 cghv40100 typical performance figure 5. - g max and k-factor vs frequency v dd = 50 v, i dq = 600 ma, tcase = 25c 0.5 0.75 1 1.25 30 35 40 45 k - f act o r g m a x ( d b ) maximum avaliable gain & k-factor cghv40100 vdd = 50 v, idq = 600 ma, tcase = 25 c gmax k-factor 0 0.25 0.5 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 cghv40100-amp application circuit schematic cghv40100-amp application circuit cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 cghv40100-amp application circuit bill of materials designator description qty c1, c13, c15 cap, 39 pf, 0.1 pf, 250v, 0805, atc600f 3 c2 cap, 7.5 pf, 0.1 pf, 250 v, 0806, atc600f 1 c3 cap, 3 pf 0.1 pf, 250 v, 0805, atc600f 1 c4, c5 cap, 1.5 pf, 0.1 pf, 250 v, 0805, atc600f 2 c7 cap, 33000 pf, 0805 100v, x7r 1 c6, c14 cap, 240 pf, 0.5 pf, 250 v, 0805, atc600f 2 c8 cap, 10 uf, 16v tantalum, 2312 1 c9, c10 cap, 1 pf, 0.1 pf, 250 v, 0805, atc600f 2 c11, c12 cap, 0.5 pf, 0.1 pf, 250 v, 0805, atc600f 2 c16 cap, 100 uf, 20%, 160 v, elec 1 r1 res, 24 ohms, ims nd3-1005cs24r0g 1 r2 red, 100 ohms, ims nd3-0805ew1000g 1 r3 res, 3.9 ohms, 0805 1 j1, j2 conn, sma, panel mount jack 2 j3 header rt>plz .1cen lk 9pos 1 baseplate, cgh35120 1 pcb, ro4350b, 2.5 x 4 x 0.020, cghv40100f 1 cghv40100-amp demonstration amplifer circuit cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 cghv40100 power dissipation de-rating curve figure 5. - transient power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2). 40 50 60 70 80 90 po w e r d i s s i p a ti o n (w ) cghv40100 power dissipation de-rating curve 0 10 20 30 0 25 50 75 100 125 150 175 200 225 250 po w e r d i s s i p a ti o n (w ) maximum case temperature ( c) flange - cw pill - cw note 1 cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 product dimensions cghv40100f (package type 440193) product dimensions cghv40100p (package type 440206) cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product ordering information order number description unit of measure image cghv40100f gan hemt each cghv40100p gan hemt each cghv40100-tb test board without gan hemt each cghv40100f-amp test board with gan hemt (fanged) installed each CGHV40100P-AMP test board with gan hemt(pill) installed each photo tbd cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv40100 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.cree fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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